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PBSS4540X - 40V 5A NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat transistor in a medium power SOT89 (SC-62) package.

PNP complement: PBSS5540X.

MARKING TYPE NUMBER PBSS4540X Note 1.

= p: made in Hong Kong.

= t: made in Malaysia.

= W: made in China.

Key Features

  • High hFE and low VCEsat at high current operation.
  • High collector current capability: IC maximum 4 A.
  • High efficiency leading to less heat generation.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 04 Philips Semiconductors www.DataSheet4U.com Product specification 40 V, 5 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fan and motor) • Strobe flash units for DSC and mobile phones • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers.